Rahman, M.I (1983) A study of the non-equilibrium response of an mos device subjected to a triangular voltage wave form. Masters thesis, Durham University.
This thesis is concerned with the study of the response of an MOS device subjected to a triangular voltage wave form of such frequency as to take the device into the non-equilibrium mode of operation. A new technique, called the drop-back technique, is developed and used to measure device characteristics, such as the depletion width within the semiconductor bulk region, the generation current and generation rate of bulk traps. A direct plot of surface potential versus the gate voltage is obtained by using an analogue circuit and the results are compared with the similar plot obtained by the dropback technique.
|Item Type:||Thesis (Masters)|
|Award:||Master of Science|
|Copyright:||Copyright of this thesis is held by the author|
|Deposited On:||15 May 2013 15:45|