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Durham e-Theses
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A study of the non-equilibrium response of an mos device subjected to a triangular voltage wave form.

Rahman, M.I (1983) A study of the non-equilibrium response of an mos device subjected to a triangular voltage wave form. Masters thesis, Durham University.

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Abstract

This thesis is concerned with the study of the response of an MOS device subjected to a triangular voltage wave form of such frequency as to take the device into the non-equilibrium mode of operation. A new technique, called the drop-back technique, is developed and used to measure device characteristics, such as the depletion width within the semiconductor bulk region, the generation current and generation rate of bulk traps. A direct plot of surface potential versus the gate voltage is obtained by using an analogue circuit and the results are compared with the similar plot obtained by the dropback technique.

Item Type:Thesis (Masters)
Award:Master of Science
Thesis Date:1983
Copyright:Copyright of this thesis is held by the author
Deposited On:15 May 2013 15:45

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