A study of the non-equilibrium response of an mos device subjected to a triangular voltage wave form.

Abstract

This thesis is concerned with the study of the response of an MOS device subjected to a triangular voltage wave form of such frequency as to take the device into the non-equilibrium mode of operation. A new technique, called the drop-back technique, is developed and used to measure device characteristics, such as the depletion width within the semiconductor bulk region, the generation current and generation rate of bulk traps. A direct plot of surface potential versus the gate voltage is obtained by using an analogue circuit and the results are compared with the similar plot obtained by the dropback technique.